Surface Potential modeling of Dual Metal Gate-Graded Channel-Dual Oxide Thickness with two dielectric constant different of Surrounding Gate MOSFET
نویسندگان
چکیده
منابع مشابه
Channel thickness dependency of high-k gate dielectric based double-gate CMOS inverter
This work investigates the channel thickness dependency of high-k gate dielectric-based complementary metal-oxide-semiconductor (CMOS) inverter circuit built using a conventional double-gate metal gate oxide semiconductor field-effect transistor (DG-MOSFET). It is espied that the use of high-k dielectric as a gate oxide in n/p DG-MOSFET based CMOS inverter results in a high noise margin as well...
متن کاملMoS2 Dual-Gate MOSFET With Atomic-Layer-Deposited Al2O3 as Top-Gate Dielectric
We demonstrate atomic-layer-deposited (ALD) high-k dielectric integration on 2-D layer-structured molybdenum disulfide (MoS2) crystals and MoS2 dual-gate n-channel MOSFETs with ALD Al2O3 as the gate dielectric. Our C–V study of MOSFET structures shows good interface between 2-D MoS2 crystal and ALD Al2O3. Maximum drain currents using back gates and top gates are measured to be 7.07 and 6.42 mA/...
متن کاملAn Accurate 2D Analytical Model for Transconductance to Drain Current ratio (gm/Id) for a Dual Halo Dual Dielectric Triple Material Cylindrical Gate All Around MOSFETs
A dual-halo dual-dielectric triple-material cylindrical-gate-all-around/surrounding gate (DH-DD-TM-CGAA/SG) MOSFET has been proposed and an analytical model for the transconductance-to-drain current ratio (TDCR) has been developed. It is verified that incorporation of dual-halo with dual-dielectric and triple-material results in enhancing the device performance in terms of improved TDCR. The ef...
متن کاملImpact of SOI thickness on device performance and gate oxide reliability of Ni fully silicide metal-gate strained SOI MOSFET
This study investigates the effects of oxide traps induced by SOI of various thicknesses (TSOI = 50, 70 and 90 nm) on the device performance and gate oxide TDDB reliability of Ni fully silicide metal-gate strained SOI MOSFETs capped with different stressed SiN contact-etch-stop-layer (CESL). The effects of different stress CESLs on the gate leakage currents of the SOI MOSFET devices are also in...
متن کاملEffect of Dual Gate Mosfet on the Decoder Based Demultiplexer
In this work, a decoder based demultiplexer is designed using DG MOSFET and its functional behavior is analyzed along with the characteristics of the device. Equivalent circuit method is followed in this work, which is very significant in analyzing the characteristics and performance of the dual gate metal oxide semiconductor field effect transistor. The maximum drain current obtained is 40 mA ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: International Journal of Reconfigurable and Embedded Systems (IJRES)
سال: 2020
ISSN: 2089-4864,2089-4864
DOI: 10.11591/ijres.v9.i1.pp52-60